Electronic structure, surface doping, and optical response in epitaxial WSe2 thin films

Zhang, Yi; Ugeda, Miguel M.; Jin, Chenhao; Shi, Su -Fei; Bradley, Aaron J.; Martin-Recio, Ana; Ryu, Hyejin; Kim, Jonghwan; Tang, Shujie; Kim, Yeongkwan; Zhou, Bo; Hwang, Choongyu; Chen, Yulin; Wang, Feng; Crommie, Michael F.; Hussain, Zahid; Shen, Zhi -Xun; Mo, Sung -Kwan

doi:10.1021/acs.nanolett.6b00059

Title: Electronic structure, surface doping, and optical response in epitaxial WSe₂ thin films

Journal Article · Mon Mar 14 00:00:00 EDT 2016 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b00059· OSTI ID:1257732

Zhang, Yi ^[1]; Ugeda, Miguel M. ^[2]; Jin, Chenhao ^[3]; Shi, Su -Fei ^[4]; Bradley, Aaron J. ^[3]; Martin-Recio, Ana ^[5]; Ryu, Hyejin ^[6]; Kim, Jonghwan ^[3]; Tang, Shujie ^[7]; Kim, Yeongkwan ^[8]; Zhou, Bo ^[9]; Hwang, Choongyu ^[10]; Chen, Yulin ^[11]; Wang, Feng ^[12]; Crommie, Michael F. ^[12]; Hussain, Zahid ^[8]; Shen, Zhi -Xun ^[13]; Mo, Sung -Kwan ^[8]

Nanjing Univ., Nanjing (China); SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); CIC nanoGUNE, Donostia-San Sebastian (Spain); Ikerbasque, Basque Foundation for Science, Bilbao (Spain)
Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Rensselaer Polytechnic Inst., Troy, NY (United States)
Univ. of California, Berkeley, CA (United States); Univ. Autonoma de Madrid, Madrid (Spain)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Pohang Univ. of Science and Technology, Pohang (Korea)
Stanford Univ., Stanford, CA (United States); Chinese Academy of Sciences, Shanghai (China)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Stanford Univ., Stanford, CA (United States); Univ. of Oxford, Oxford (United Kingdom)
Pohang Univ. of Science and Technology, Pohang (Korea); Pusan National Univ., Busan (Korea)
Univ. of Oxford, Oxford (United Kingdom)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)

© 2016 American Chemical Society. High quality WSe 2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy. The combination of angle-resolved photoemission, scanning tunneling microscopy/spectroscopy, and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe 2 /BLG. We observe that a bilayer of WSe 2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe 2 . In the monolayer limit, WSe 2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX 2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe 2 /BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional three-dimensional semiconductors, yet small as compared to other two-dimensional transition metal dichalcogennides (TMDCs) semiconductors. Finally, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515; AC02-05CH11231

OSTI ID:: 1257732

Alternate ID(s):: OSTI ID: 1393040

Report Number(s):: SLAC-PUB-16566

Journal Information:: Nano Letters, Vol. 16, Issue 4; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 130 works

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Title: Electronic structure, surface doping, and optical response in epitaxial WSe2 thin films

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Title: Electronic structure, surface doping, and optical response in epitaxial WSe₂ thin films