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Title: Engineering of an ultra-thin molecular superconductor by charge transfer

Patent ·
OSTI ID:1255946

A method of forming a superconductive device of a single layer of (BETS).sub.2GaCl.sub.4 molecules on a substrate surface which displays a superconducting gap that increases exponentially with the length of the molecular chain is provided.

Research Organization:
Ohio Univ., Athens, OH (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
FG02-02ER46012
Assignee:
Ohio University (Athens, OH)
Patent Number(s):
9,362,476
Application Number:
13/593,592
OSTI ID:
1255946
Resource Relation:
Patent File Date: 2012 Aug 24
Country of Publication:
United States
Language:
English

References (8)

Thin superconducting film and manufacturing method for the same patent March 1992
Electroconductive thin film of organic charge transfer complexes of bisethylenedithiatetrathiafulvalene patent July 1993
Superconductivity in just four pairs of (BETS)2GaCl4 molecules journal March 2010
Structures having enhanced biaxial texture and method of fabricating same patent April 1998
Josephson tunnel junction with polycrystalline silicon, germanium or silicon-germanium alloy tunneling barrier patent September 1980
High temperature superconductor/diamond composite article, and method of making the same patent June 1992
New organic superconductor, λ-(BETS)2GaCl4 and metal-insulator transition of BETS conductor with magnetic anions (BETS=bis(ethlenedithio)tetraselenafulvalene) journal March 1995
Superconductivity and pseudogap states studied by microwave conductivity measurements of λ-(BEDT-TSF)2GaCl4 journal July 2006