Graphene engineering by neon ion beams

Iberi, Vighter; Ievlev, Anton V.; Vlassiouk, Ivan; Jesse, Stephen; Kalinin, Sergei V.; Joy, David C.; Rondinone, Adam J.; Belianinov, Alex; Ovchinnikova, Olga S.

doi:10.1088/0957-4484/27/12/125302

Title: Graphene engineering by neon ion beams

Journal Article · Thu Feb 18 00:00:00 EST 2016 · Nanotechnology

DOI:https://doi.org/10.1088/0957-4484/27/12/125302· OSTI ID:1247936

Iberi, Vighter ^[1]; Ievlev, Anton V. ^[2]; Vlassiouk, Ivan ^[2]; Jesse, Stephen ^[2]; Kalinin, Sergei V. ^[2]; Joy, David C. ^[1]; Rondinone, Adam J. ^[2]; Belianinov, Alex ^[2]; Ovchinnikova, Olga S. ^[2]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Achieving the ultimate limits of materials and device performance necessitates the engineering of matter with atomic, molecular, and mesoscale fidelity. While common for organic and macromolecular chemistry, these capabilities are virtually absent for 2D materials. In contrast to the undesired effect of ion implantation from focused ion beam (FIB) lithography with gallium ions, and proximity effects in standard e-beam lithography techniques, the shorter mean free path and interaction volumes of helium and neon ions offer a new route for clean, resist free nanofabrication. Furthermore, with the advent of scanning helium ion microscopy, maskless He⁺ and Ne⁺ beam lithography of graphene based nanoelectronics is coming to the forefront. Here, we will discuss the use of energetic Ne ions in engineering graphene devices and explore the mechanical, electromechanical and chemical properties of the ion-milled devices using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we demonstrate that the mechanical, electrical and optical properties of the exact same devices can be quantitatively extracted. Additionally, the effect of defects inherent in ion beam direct-write lithography, on the overall performance of the fabricated devices is elucidated.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1247936

Journal Information:: Nanotechnology, Vol. 27, Issue 12; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 18 works

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Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation Córdoba, Rosa; Orús, Pablo; Strohauer, Stefan Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-50411-w	journal	October 2019
Big Data Analytics for Scanning Transmission Electron Microscopy Ptychography Jesse, S.; Chi, M.; Belianinov, A. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep26348	journal	May 2016

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36 MATERIALS SCIENCE
graphene
helium ion microscopy
direct-write lithography
Kelvin probe force microscopy
band excitation force modulation microscopy
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scanning probe microscopy

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