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Title: Epitaxial growth of CZT(S,Se) on silicon

Patent ·
OSTI ID:1243034
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Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0006334
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Number(s):
9,287,426
Application Number:
14/499,788
OSTI ID:
1243034
Resource Relation:
Patent File Date: 2014 Sep 29
Country of Publication:
United States
Language:
English

References (10)

Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4 journal March 2010
The path towards a high-performance solution-processed kesterite solar cell journal June 2011
On the Sn loss from thin films of the material system Cu–Zn–Sn–S in high vacuum journal January 2010
Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation journal December 2008
Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporation conference June 2010
Epitaxial growth of Cu2ZnSnS4 thin films by pulsed laser deposition journal September 2006
Existence and removal of Cu 2 Se second phase in coevaporated Cu 2 ZnSnSe 4 thin films journal March 2012
Compound semiconductor film, light emitting film, and manufacturing method thereof patent January 2012
Device substrate and method for producing device substrate patent-application January 2004
Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Controlled S and Se patent-application April 2012

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