Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

Wang, Qi; Bi, Cheng; Huang, Jinsong

doi:10.1016/j.nanoen.2015.04.029

Title: Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

Journal Article · Wed May 06 00:00:00 EDT 2015 · Nano Energy

DOI:https://doi.org/10.1016/j.nanoen.2015.04.029· OSTI ID:1238033

Wang, Qi ^[1]; Bi, Cheng ^[1]; Huang, Jinsong ^[1]

Univ. of Nebraska, Lincoln, NE (United States)

We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. As a result, this study reveals that the high resistivity of currently broadly applied polymer hole transport layer limits the device efficiency, and points a new direction to improve the device efficiency.

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Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0006709

OSTI ID:: 1238033

Alternate ID(s):: OSTI ID: 1251825

Journal Information:: Nano Energy, Vol. 15, Issue C; ISSN 2211-2855

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 240 works

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