Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors
Abstract
Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs 0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|=0.292. Moreover, the measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. As a result, excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1236209
- Report Number(s):
- SAND-2015-4641J
Journal ID: ISSN 0003-6951; APPLAB; 590731
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 107; Journal Issue: 18; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; carrier lifetimes; III-V semiconductors; dark currents; doping; photodetectors
Citation Formats
Olson, B. V., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Leonhardt, D., Coon, W. T., Fortune, T. R., Cavaliere, M. A., Tauke-Pedretti, A., and Shaner, E. A. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors. United States: N. p., 2015.
Web. doi:10.1063/1.4935159.
Olson, B. V., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Leonhardt, D., Coon, W. T., Fortune, T. R., Cavaliere, M. A., Tauke-Pedretti, A., & Shaner, E. A. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors. United States. https://doi.org/10.1063/1.4935159
Olson, B. V., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Leonhardt, D., Coon, W. T., Fortune, T. R., Cavaliere, M. A., Tauke-Pedretti, A., and Shaner, E. A. 2015.
"Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors". United States. https://doi.org/10.1063/1.4935159. https://www.osti.gov/servlets/purl/1236209.
@article{osti_1236209,
title = {Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors},
author = {Olson, B. V. and Kim, J. K. and Kadlec, E. A. and Klem, J. F. and Hawkins, S. D. and Leonhardt, D. and Coon, W. T. and Fortune, T. R. and Cavaliere, M. A. and Tauke-Pedretti, A. and Shaner, E. A.},
abstractNote = {Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs 0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|=0.292. Moreover, the measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. As a result, excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.},
doi = {10.1063/1.4935159},
url = {https://www.osti.gov/biblio/1236209},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 107,
place = {United States},
year = {Tue Nov 03 00:00:00 EST 2015},
month = {Tue Nov 03 00:00:00 EST 2015}
}
Web of Science
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Works referencing / citing this record:
High operating temperature InAsSb-based mid-infrared focal plane array with a band-aligned compound barrier
journal, January 2020
- Deng, Gongrong; Yang, Wenyun; Zhao, Peng
- Applied Physics Letters, Vol. 116, Issue 3
Improved quantitative circuit model of realistic patch-based nanoantenna-enabled detectors
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