skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: The impact of Cu on recombination in high voltage CdTe solar cells

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4938127· OSTI ID:1236151

Using photoluminescence spectroscopy, we construct a recombination model for state-of-the-art CdTe solar cells doped with Cu. Here, we observe that Cu on Cd sites form a dominant acceptor state about 150 meV from the valence band. Although it is intuitive that this state can increase hole density, we also find that this relatively shallow dopant can also limit lifetime. Consequently, CdTe solar cells doped with Cu could have a lifetime limitation inversely proportional to the hole concentration.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); NREL-First Solar Cooperative Research and Development Agreement (CRADA)
Grant/Contract Number:
AC36-08GO28308; AC36-08-GO28308
OSTI ID:
1236151
Alternate ID(s):
OSTI ID: 1234057
Report Number(s):
NREL/JA-5900-65705; APPLAB
Journal Information:
Applied Physics Letters, Vol. 107, Issue 24; Related Information: Applied Physics Letters; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 27 works
Citation information provided by
Web of Science

References (35)

Donors and acceptors in tellurium compounds; The problem of doping and self-compensation journal July 1985
Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case of CdTe journal October 2014
Identification of Cu and Ag acceptors in CdTe journal September 1982
Some Diffusion and Solubility Measurements of Cu in CdTe journal November 1968
Photoluminescence study of Cu diffusion and electromigration in CdTe journal July 1999
Pairing between Fast Diffusing Donors and Shallow Acceptors in p-CdTe journal July 1992
Tailoring Impurity Distribution in Polycrystalline CdTe Solar Cells for Enhanced Minority Carrier Lifetime journal November 2013
Cu-related recombination in CdS/CdTe solar cells journal February 2008
Phase control of CuxTe film and its effects on CdS/CdTe solar cell journal May 2007
Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe journal June 2011
Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells journal February 2009
A comprehensive picture of Cu doping in CdTe solar cells journal November 2013
The copper influence on the PL spectra of CdTe thin film as a component of the CdS/CdTe heterojunction journal February 2009
Spectrally and time resolved photoluminescence analysis of the CdS/CdTe interface in thin-film photovoltaic solar cells journal April 2013
Single-crystal CdTe solar cells with V oc greater than 900 mV journal August 2014
CdTe Solar Cells at the Threshold to 20% Efficiency journal October 2013
Photoluminescence of Cu-doped CdTe and related stability issues in CdS/CdTe solar cells journal September 2000
Localized defects in p-CdTe:Cu doped by copper incorporation during Bridgman growth journal September 1988
Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation journal October 2013
Analysis of charge separation dynamics in a semiconductor junction journal January 2005
Time-resolved photoluminescence studies of CdTe solar cells journal September 2003
The role of drift, diffusion, and recombination in time-resolved photoluminescence of CdTe solar cells determined through numerical simulation: The role of drift, diffusion, and recombination in time-resolved photoluminescence journal February 2013
Nondestructive analysis of Hg 1− x Cd x Te ( x =0.00, 0.20, 0.29, and 1.00) by spectroscopic ellipsometry. I. Chemical oxidation and etching journal July 1984
Optical investigations of defects in Cd 1 x Zn x Te journal April 1995
Optical properties of CdTe1−xSx (0⩽x⩽1): Experiment and modeling journal May 1999
Effective Electron Mass in CdTe journal March 1963
Comprehensive photoluminescence study of chlorine activated polycrystalline cadmium telluride layers journal December 2010
Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride journal March 2014
Excited states of Ag and Cu acceptors in CdTe journal October 1982
Dependence of the Peak Energy of the Pair-Photoluminescence Band on Excitation Intensity journal October 1972
Kinetics of Radiative Recombination at Randomly Distributed Donors and Acceptors journal October 1965
Recombination Analysis in Cadmium Telluride Photovoltaic Solar Cells With Photoluminescence Spectroscopy journal January 2016
Minority-Carrier Lifetime and Surface Recombination Velocity in Single-Crystal CdTe journal January 2015
Nonradiative capture and recombination by multiphonon emission in GaAs and GaP journal January 1977
Radiative and interfacial recombination in CdTe heterostructures journal December 2014

Cited By (3)

Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells journal August 2019
Point defect engineering in thin-film solar cells journal June 2018
Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe journal November 2016