Compact modeling of total ionizing dose and aging effects in MOS technologies

Journal Article · Thu Jun 18 00:00:00 EDT 2015 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2015.2414426· OSTI ID:1235324

Esqueda, Ivan S. ^[1]; Barnaby, Hugh J. ^[2]; King, Michael Patrick ^[3]

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1. Univ. of Southern California, Marina del Rey, CA (United States)
2. Arizona State Univ., Tempe, AZ (United States)
3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1235324
• Report Number(s): SAND-2015-0868J; 565596
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 62, Issue 4; ISSN 0018-9499
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
compact modeling
ionizing radiation
aging effects
MOSFET
SOI
semiconductor devices