Two-step growth of two-dimensional WSe2/MoSe2 heterostructures

Gong, Yongji; Lei, Sidong; Lou, Jun; Liu, Zheng; Vajtai, Robert; Zhou, Wu; Ajayan, Pullikel M.; Ye, Gonglan; Li, Bo; He, Yongmin; Keyshar, Kunttal; Zhang, Xiang; Wang, Qizhong

doi:10.1021/acs.nanolett.5b02423

Title: Two-step growth of two-dimensional WSe₂/MoSe₂ heterostructures

Journal Article · Mon Aug 03 00:00:00 EDT 2015 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.5b02423· OSTI ID:1214512

Gong, Yongji ^[1]; Lei, Sidong ^[1]; Lou, Jun ^[1]; Liu, Zheng ^[2]; Vajtai, Robert ^[1]; Zhou, Wu ^[3]; Ajayan, Pullikel M. ^[1]; Ye, Gonglan ^[1]; Li, Bo ^[1]; He, Yongmin ^[1]; Keyshar, Kunttal ^[1]; Zhang, Xiang ^[1]; Wang, Qizhong ^[1]

Rice Univ., Houston, TX (United States)
Nanyang Technological Univ. (Singapore)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Two dimensional (2D) materials have attracted great attention due to their unique properties and atomic thickness. Although various 2D materials have been successfully synthesized with different optical and electrical properties, a strategy for fabricating 2D heterostructures must be developed in order to construct more complicated devices for practical applications. Here we demonstrate for the first time a two-step chemical vapor deposition (CVD) method for growing transition-metal dichalcogenide (TMD) heterostructures, where MoSe₂ was synthesized first and followed by an epitaxial growth of WSe₂ on the edge and on the top surface of MoSe₂. Compared to previously reported one-step growth methods, this two-step growth has the capability of spatial and size control of each 2D component, leading to much larger (up to 169 μm) heterostructure size, and cross-contamination can be effectively minimized. Furthermore, this two-step growth produces well-defined 2H and 3R stacking in the WSe₂/MoSe₂ bilayer regions and much sharper in-plane interfaces than the previously reported MoSe₂/WSe₂ heterojunctions obtained from one-step growth methods. The resultant heterostructures with WSe₂/MoSe₂ bilayer and the exposed MoSe₂ monolayer display rectification characteristics of a p-n junction, as revealed by optoelectronic tests, and an internal quantum efficiency of 91% when functioning as a photodetector. As a result, a photovoltaic effect without any external gates was observed, showing incident photon to converted electron (IPCE) efficiencies of approximately 0.12%, providing application potential in electronics and energy harvesting.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1214512

Journal Information:: Nano Letters, Vol. 15, Issue 9; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 426 works

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