Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof
In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
- Research Organization:
- Rice Univ., Houston, TX (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-05GO15073
- Assignee:
- William Marsh Rice University (Houston, TX)
- Patent Number(s):
- 9,129,676
- Application Number:
- 14/050,589
- OSTI ID:
- 1214120
- Resource Relation:
- Patent File Date: 2013 Oct 10
- Country of Publication:
- United States
- Language:
- English
Quantum well structures useful for semiconductor devices
|
patent | June 1993 |
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