Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation
Abstract
We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.
- Authors:
-
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Korea Univ., Seoul (Korea)
- Fisk Univ., Nashville, TN (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
- OSTI Identifier:
- 1213356
- Report Number(s):
- BNL-108049-2015-JA
Journal ID: ISSN 2166-532X; AMPADS; NN2001
- Grant/Contract Number:
- SC00112704
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 4; Journal ID: ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; point defects characterization; cadmium telluride selenide (CdTeSe); radiation detectors; Traveling Heater Method (THM)
Citation Formats
Gul, R., Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Lee, W., Yang, G., Burger, A., James, R. B., and Cui, Y. Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation. United States: N. p., 2015.
Web. doi:10.1063/1.4917270.
Gul, R., Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Lee, W., Yang, G., Burger, A., James, R. B., & Cui, Y. Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation. United States. https://doi.org/10.1063/1.4917270
Gul, R., Roy, U. N., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Hossain, A., Lee, W., Yang, G., Burger, A., James, R. B., and Cui, Y. 2015.
"Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation". United States. https://doi.org/10.1063/1.4917270. https://www.osti.gov/servlets/purl/1213356.
@article{osti_1213356,
title = {Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation},
author = {Gul, R. and Roy, U. N. and Bolotnikov, A. E. and Camarda, G. S. and Cui, Y. and Hossain, A. and Lee, W. and Yang, G. and Burger, A. and James, R. B. and Cui, Y.},
abstractNote = {We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.},
doi = {10.1063/1.4917270},
url = {https://www.osti.gov/biblio/1213356},
journal = {APL Materials},
issn = {2166-532X},
number = 4,
volume = 3,
place = {United States},
year = {Wed Apr 15 00:00:00 EDT 2015},
month = {Wed Apr 15 00:00:00 EDT 2015}
}
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Works referencing / citing this record:
An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers
journal, March 2017
- Gul, R.; Roy, U. N.; James, R. B.
- Journal of Applied Physics, Vol. 121, Issue 11