Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures

Xiong, Gang; Moutanabbir, Oussama; Reiche, Manfred; Harder, Ross; Robinson, Ian

doi:10.1002/adma.201304511

Title: Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures

Journal Article · Sat Dec 06 00:00:00 EST 2014 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201304511· OSTI ID:1212765

Xiong, Gang ^[1]; Moutanabbir, Oussama ^[2]; Reiche, Manfred ^[3]; Harder, Ross ^[4]; Robinson, Ian ^[1]

Univ. College London, London (United Kingdom)
Ecole Polytechnique de Montreal, Montreal Quebec(Canada)
Max Planck Institute of Microstructure Physics, Halle (Germany)
Argonne National Lab. (ANL), Argonne, IL (United States)

Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra-high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensions is highly novel. In this study, we will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon-on-insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source.; Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1212765

Alternate ID(s):: OSTI ID: 1242406

Journal Information:: Advanced Materials, Vol. 26, Issue 46; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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X-ray ptychography on low-dimensional hard-condensed matter materials Shi, Xiaowen; Burdet, Nicolas; Chen, Bo Applied Physics Reviews, Vol. 6, Issue 1 https://doi.org/10.1063/1.5045131	journal	March 2019
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