Graphene-silicon layered structures on single-crystalline Ir(111) thin films

Que, Yande D.; Tao, Jing; Zhang, Yong; Wang, Yeliang L.; Wu, Lijun J.; Zhu, Yimei M.; Kim, Kisslinger; Weinl, Michael; Schreck, Matthias; Shen, Chengmin M.; Du, Shixuan X.; Liu, Yunqi Q.; Gao, H. -J.; Huang, Li; Xu, Wenyan Y.

doi:10.1002/admi.201400543

Title: Graphene-silicon layered structures on single-crystalline Ir(111) thin films

Journal Article · Tue Jan 20 00:00:00 EST 2015 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201400543· OSTI ID:1193196

Que, Yande D. ^[1]; Tao, Jing ^[2]; Zhang, Yong ^[1]; Wang, Yeliang L. ^[1]; Wu, Lijun J. ^[2]; Zhu, Yimei M. ^[2]; Kim, Kisslinger ^[2]; Weinl, Michael ^[3]; Schreck, Matthias ^[3]; Shen, Chengmin M. ^[1]; Du, Shixuan X. ^[1]; Liu, Yunqi Q. ^[1]; Gao, H. -J. ^[1]; Huang, Li ^[1]; Xu, Wenyan Y. ^[1]

Chinese Academy of Sciences (CAS), Beijing (China)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Univ. Augsburg, Augsburg (Germany)

Epitaxial growth of graphene on transition metal crystals, such as Ru,⁽¹⁻³⁾ Ir,⁽⁴⁻⁶⁾ and Ni,⁽⁷⁾ provides large-area, uniform graphene layers with controllable defect density, which is crucial for practical applications in future devices. To decrease the high cost of single-crystalline metal bulks, single-crystalline metal films are strongly suggested as the substrates for epitaxial growth large-scale high-quality graphene.⁽⁸⁻¹⁰⁾ Moreover, in order to weaken the interactions of graphene with its metal host, which may result in a suppression of the intrinsic properties of graphene,⁽¹¹ ¹²⁾ the method of element intercalation of semiconductors at the interface between an epitaxial graphene layer and a transition metal substrate has been successfully realized.⁽¹³⁻¹⁶⁾

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704

OSTI ID:: 1193196

Report Number(s):: BNL-107859-2015-JA; R&D Project: MA015MACA; KC0201010

Journal Information:: Advanced Materials Interfaces, Vol. 2, Issue 3; ISSN 2196-7350

Publisher:: Wiley-VCHCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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References (23)

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