Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon.
Conference
·
OSTI ID:11901
Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 11901
- Report Number(s):
- ANL/MSD/CP-99610; TRN: US0102280
- Resource Relation:
- Conference: 8th International Symposium on Passivity of Metals and Semiconductors, Jasper, Alberta (CA), 05/09/1999--05/15/1999; Other Information: PBD: 21 Jul 1999
- Country of Publication:
- United States
- Language:
- English
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