skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well

Technical Report ·
DOI:https://doi.org/10.2172/1177371· OSTI ID:1177371
 [1];  [1];  [1];  [2];  [2];  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. National Taiwan Univ., Taipei (Taiwan)

High quality Si/SiGe quantum well samples have provided an ideal platform to study the electron-electron (ee) interactions in two-dimensional electron systems (2DES). Currently, the sample mobility has surpassed 106 cm2/Vs and very low carrier densities are realized, which are crucial to reveal strong e-e interactions

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1177371
Report Number(s):
SAND2015-20732R; 558181
Country of Publication:
United States
Language:
English