Method for cleaning a solar cell surface opening made with a solar etch paste
A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.
- Research Organization:
- Georgia Institute of Technology, Atlanta, GA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-07GO17023
- Assignee:
- Georgia Tech Research Corporation (Atlanta, GA)
- Patent Number(s):
- 7,741,225
- Application Number:
- 12/116,132
- OSTI ID:
- 1176386
- Resource Relation:
- Patent File Date: 2008 May 06
- Country of Publication:
- United States
- Language:
- English
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