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Title: ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping

Patent ·
OSTI ID:1176116
; ; ; ;

A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99GO10093
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
7,179,677
Application Number:
10/534,217
OSTI ID:
1176116
Resource Relation:
Patent File Date: 2003 Sep 03
Country of Publication:
United States
Language:
English

References (6)

Preparation of Zn doped Cu(In,Ga)Se2 thin films by physical vapor deposition for solar cells journal June 2003
Charging and discharging of defect states in CIGS/ZnO junctions journal February 2000
Ga2O3 segregation in Cu(In, Ga)Se2/ZnO superstrate solar cells and its impact on their photovoltaic properties journal February 2002
Surface treatment of CuInGaSe2 thin films and its effect on the photovoltaic properties of solar cells journal September 2003
A ZnO/p-CuInSe2 thin film solar cell prepared entirely by spray pyrolysis journal April 1982
Buried pn homojunction in Cu(InGa)Se/sub 2/ solar cells formed by intentional Zn doping
  • Yamada, A.; Sugiyama, T.; Chaisitsak, S.
  • 28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) https://doi.org/10.1109/PVSC.2000.915871
conference January 2000

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14 SOLAR ENERGY