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Title: Selective etching of silicon carbide films

Patent ·
OSTI ID:1176038
; ;

A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

Research Organization:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
9782
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
7,151,277
Application Number:
10/613,508
OSTI ID:
1176038
Resource Relation:
Patent File Date: 2003 Jul 03
Country of Publication:
United States
Language:
English

References (20)

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journal January 2002
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Deep reactive ion etching of silicon carbide
  • Tanaka, S.; Rajanna, K.; Abe, T.
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journal January 2001
High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma journal March 2003

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