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Title: Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

Patent ·
OSTI ID:1175951

A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99GO10337
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
7,122,736
Application Number:
10/485,715
OSTI ID:
1175951
Resource Relation:
Patent File Date: 2001 Aug 16
Country of Publication:
United States
Language:
English

References (7)

Preparation of amorphous hydrogenated silicon-germanium material and solar cells using the thermocatalytic chemical vapor deposition journal March 1999
Low Hydrogen Content, High Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD journal January 1999
Hydrogenated Amorphous Silicon Germanium Alloys Grown by the Hot-Wire Chemical Vapor Deposition Technique journal January 1998
H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers journal January 1998
a-Si:H-based triple-junction cells prepared at i-layer deposition rates of 10 a/s using a 70 MHz PECVD technique
  • Jones, S. J.; Liu, T.; Deng, X.
  • 28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) https://doi.org/10.1109/PVSC.2000.916015
conference January 2000
Microwave Glow-Discharge Deposition of Amorphous Silicon Based Alloys at High Deposition Rates for Solar Cell Application journal January 1995
High Quality Amorphous Silicon Germanium Alloy Solar Cells Made by Hot-wire CVD at 10 Å/s journal January 2001