Silicon-based visible and near-infrared optoelectric devices
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.
- Research Organization:
- President & Fellows of Harvard College, Cambridge, MA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-016011051
- Assignee:
- President & Fellows of Harvard College (Cambridge, MA)
- Patent Number(s):
- 7,057,256
- Application Number:
- 10/950,230
- OSTI ID:
- 1175780
- Country of Publication:
- United States
- Language:
- English
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Silicon-based visible and near-infrared optoelectric devices
Silicon-based visible and near-infrared optoelectric devices