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Title: Thin film capillary process and apparatus

Patent ·
OSTI ID:1174585

Method and system of forming microfluidic capillaries in a variety of substrate materials. A first layer of a material such as silicon dioxide is applied to a channel etched in substrate. A second, sacrificial layer of a material such as a polymer is deposited on the first layer. A third layer which may be of the same material as the first layer is placed on the second layer. The sacrificial layer is removed to form a smooth walled capillary in the substrate.

Research Organization:
Univ. of California, Oakland, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-48
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
6,649,078
Application Number:
09/732,004
OSTI ID:
1174585
Country of Publication:
United States
Language:
English

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