Removing a sheet from the surface of a melt using elasticity and buoyancy
Patent
·
OSTI ID:1136751
Embodiments related to sheet production are disclosed. A melt of a material is cooled to form a sheet of the material on the melt. The sheet is formed in a first region at a first sheet height. The sheet is translated to a second region such that it has a second sheet height higher than the first sheet height. The sheet is then separated from the melt. A seed wafer may be used to form the sheet.
- Research Organization:
- Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (USA).
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0000595
- Assignee:
- Varian Semiconductor Equipment Associates, Inc. (Gloucester, MA)
- Patent Number(s):
- 8,764,901
- Application Number:
- 13/039,808
- OSTI ID:
- 1136751
- Country of Publication:
- United States
- Language:
- English
Similar Records
Sheet production apparatus for removing a crystalline sheet from the surface of a melt using gas jets located above and below the crystalline sheet
Removing a sheet from the surface of a melt using gas jets
Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
Patent
·
Wed Jun 14 00:00:00 EDT 2017
·
OSTI ID:1136751
Removing a sheet from the surface of a melt using gas jets
Patent
·
Tue Apr 01 00:00:00 EDT 2014
·
OSTI ID:1136751
Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
Patent
·
Tue May 15 00:00:00 EDT 2018
·
OSTI ID:1136751