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Title: Method of fabricating a solar cell with a tunnel dielectric layer

Patent ·
OSTI ID:1130063

Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

Research Organization:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07GO17043
Assignee:
SunPower Corporation (San Jose, CA)
Patent Number(s):
8,709,851
Application Number:
13/677,611
OSTI ID:
1130063
Resource Relation:
Patent File Date: 2012 Nov 15
Country of Publication:
United States
Language:
English

References (18)

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Method for forming oxide thin film and the treatment of silicon substrate patent September 1998
Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate patent July 2005
Back side contact solar cell with doped polysilicon regions patent December 2009
Solar cell having polymer heterojunction contacts patent May 2010
Method of fabricating a solar cell with a tunnel dielectric layer patent December 2012
Solar Cell Having Doped Semiconductor Heterojunction Contacts patent-application November 2007
Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells patent-application February 2008
Solar Cell Having Silicon Nano-Particle Emitter patent-application May 2008
Simplified Back Contact for Polysilicon Emitter Solar Cells patent-application December 2009
Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors journal January 1996
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Growth and characterization of anodic oxides on Si(100) formed in 0.1 M hydrochloric acid journal June 1996
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