Effects of 2 MeV Ge+ Irradiation on AlGaN/GaN High Electron Mobility Transistors.
Conference
·
OSTI ID:1116264
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1116264
- Report Number(s):
- SAND2012-8976C; 480330
- Resource Relation:
- Conference: Proposed for presentation at the AVS Symposium held October 28 - November 2, 2012 in Tampa, FL.
- Country of Publication:
- United States
- Language:
- English
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