Low-temperature hetero-epitaxial growth of Ge on Si by high density plasma chemical vapor deposition.
Conference
·
OSTI ID:1115270
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1115270
- Report Number(s):
- SAND2006-4601C; 463714
- Resource Relation:
- Conference: Proposed for presentation at the Materials Research Symposium 2006 (Spring) held April 18-21, 2006 in San Francisco, CA.
- Country of Publication:
- United States
- Language:
- English
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