Proton-induced Upsets in 41-nm NAND Floating Gate Cells.
Conference
·
OSTI ID:1109275
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1109275
- Report Number(s):
- SAND2011-3538C; 471546
- Resource Relation:
- Conference: Proposed for presentation at the RADECS (Radiation Effects on Components & Systems) held September 19-23, 2011 in Seville, Spain.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Upsets in Erased Floating Gate Cells With High-Energy Protons
Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+? RFSoC Field-Programmable Gate Array under Proton Irradiation.
Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+? RFSoC Field-Programmable Gate Array under Proton Irradiation.
Journal Article
·
Sun Jan 01 00:00:00 EST 2017
· IEEE Transactions on Nuclear Science
·
OSTI ID:1109275
+10 more
Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+? RFSoC Field-Programmable Gate Array under Proton Irradiation.
Conference
·
Mon Jul 01 00:00:00 EDT 2019
·
OSTI ID:1109275
+1 more
Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+? RFSoC Field-Programmable Gate Array under Proton Irradiation.
Conference
·
Wed May 01 00:00:00 EDT 2019
·
OSTI ID:1109275
+1 more