Atomistic simulations of valley splitting in silicon quantum dots in the presence of disorder.
Conference
·
OSTI ID:1108825
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1108825
- Report Number(s):
- SAND2011-1754C; 470915
- Resource Relation:
- Conference: Proposed for presentation at the APS March meeting held March 21-25, 2011 in Dallas, TX.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Predicting the valley splitting of silicon quantum dots directly from a device layout.
Predicting the valley splitting of silicon quantum dots directly from a device layout.
A split accumulation gate architecture for silicon MOS quantum dots.
Conference
·
Tue Mar 01 00:00:00 EST 2016
·
OSTI ID:1108825
+6 more
Predicting the valley splitting of silicon quantum dots directly from a device layout.
Conference
·
Wed Jul 01 00:00:00 EDT 2015
·
OSTI ID:1108825
+6 more
A split accumulation gate architecture for silicon MOS quantum dots.
Conference
·
Wed Mar 01 00:00:00 EST 2017
·
OSTI ID:1108825
+9 more