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Title: Photoconductive switch package

Patent ·
OSTI ID:1107601

A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC. (Livermore, CA)
Patent Number(s):
8,563,957
Application Number:
12/775,156
OSTI ID:
1107601
Country of Publication:
United States
Language:
English

References (13)

Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces patent September 2012
Optically-Initiated Silicon Carbide High Voltage Switch patent-application May 2011
High power photoconductor bulk GaAs switch patent July 1991
Optically-initiated silicon carbide high voltage switch patent February 2012
System and Method of Modulating Electrical Signals Using Photoconductive Wide Bandgap Semiconductors as Variables Resistors patent-application October 2009
Photoconductive switch patent July 2001
Photo-semiconductor device and method of manufacturing the same patent November 2009
Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications patent March 2006
Optically Controlled Silicon Carbide and Related Wide-Bandgap Transistors and Thyristors patent-application December 2007
Photoconductive Switch Package patent-application November 2010
Optically initiated silicon carbide high voltage switch patent February 2011
Pulse sharpening using an optical pulse patent June 1994
Optically Initiated Silicon Carbide High Voltage Switch patent-application April 2007

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