P-type silicon drift detectors: First results

Conference · Thu Jun 01 00:00:00 EDT 1995

OSTI ID:110759

Wang, N W; Krieger, B; Krofcheck, D

We have fabricated a 4 cm {times} 4 cm, position-sensitive silicon drift detector using high purity, p-type silicon as the substrate. In this paper, we describe the double-sided planar process used to fabricate the detectors and the strategy used to suppress surface carrier inversion due to the presence of fixed positive charge at the Si/SiO{sub 2} interface. The key issue in optimizing the fabrication process has been to minimize leakage currents and prevent breakdown at low voltages. Tests show that a drift signal can be measured across the entire length of the detector and that the transit time of the holes varies linearly with the position of the induced charge signal.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 110759
• Report Number(s): LBL-37310; CONF-941061-22; ON: DE96001117; TRN: 95:022237
• Resource Relation: Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Norfolk, VA (United States), 30 Oct - 5 Nov 1994; Other Information: PBD: Jun 1995
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
POSITION SENSITIVE DETECTORS
FABRICATION
DRIFT CHAMBERS
P-TYPE CONDUCTORS
SILICON
SUBSTRATES