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Title: Methods for making thin layers of crystalline materials

Patent ·
OSTI ID:1088688
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Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

Research Organization:
Wisconsin Alumni Research Foundation (Madison, WI)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-03ER46028
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Number(s):
8,492,245
Application Number:
13/367,600
OSTI ID:
1088688
Country of Publication:
United States
Language:
English

References (18)

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Elastically strain-sharing nanomembranes: flexible and transferable strained silicon and silicon–germanium alloys journal February 2007
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Wafer-Scale Strain Engineering of Ultrathin Semiconductor Crystalline Layers journal July 2011
High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach journal December 1999
Lattice engineered compliant substrate for defect-free heteroepitaxial growth journal March 1997
New approach to grow pseudomorphic structures over the critical thickness journal October 1991
A printable form of silicon for high performance thin film transistors on plastic substrates journal June 2004

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