High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices.
Conference
·
OSTI ID:1082760
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1082760
- Report Number(s):
- SAND2013-4638C; 456150
- Resource Relation:
- Conference: Proposed for presentation at the Electrochemical Society Meeting held October 27 - November 1, 2013 in San Francisco, CA.
- Country of Publication:
- United States
- Language:
- English
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