Near-infrared photodetector with reduced dark current
Patent
·
OSTI ID:1079218
A photodetector is disclosed for the detection of near-infrared light with a wavelength in the range of about 0.9-1.7 microns. The photodetector, which can be formed as either an nBp device or a pBn device on an InP substrate, includes an InGaAs light-absorbing layer, an InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs contact layer. The photodetector can detect near-infrared light with or without the use of an applied reverse-bias voltage and is useful as an individual photodetector, or to form a focal plane array.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 8,299,497
- Application Number:
- 12/827,587
- OSTI ID:
- 1079218
- Country of Publication:
- United States
- Language:
- English
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journal | July 2009 |
nBn detector, an infrared detector with reduced dark current and higher operating temperature
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journal | October 2006 |
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