skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Recovery Act: Novel Kerf-Free PV Wafering that provides a low-cost approach to generate wafers from 150um to 50um in thickness

Technical Report ·
DOI:https://doi.org/10.2172/1078149· OSTI ID:1078149
 [1]
  1. Silicon Genesis Corporation, San Jose, CA (United States)

The technical paper summarizes the project work conducted in the development of Kerf-Free silicon wafering equipment for silicon solar wafering. This new PolyMax technology uses a two step process of implantation and cleaving to exfoliate 50um to 120um wafers with thicknesses ranging from 50um to 120um from a 125mm or 156mm pseudo-squared silicon ingot. No kerf is generated using this method of wafering. This method of wafering contrasts with the current method of making silicon solar wafers using the industry standard wire saw equipment. The report summarizes the activity conducted by Silicon Genesis Corporation in working to develop this technology further and to define the roadmap specifications for the first commercial proto-type equipment for high volume solar wafer manufacturing using the PolyMax technology.

Research Organization:
Silicon Genesis Corporation, San Jose, CA (United States)
Sponsoring Organization:
USDOE - Golden Colorado
DOE Contract Number:
EE0000594
OSTI ID:
1078149
Report Number(s):
DOE/EE0000594
Country of Publication:
United States
Language:
English

Similar Records

Related Subjects