skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Silicon Carbide Derived Carbons: Experiments and Modeling

Technical Report ·
DOI:https://doi.org/10.2172/1077158· OSTI ID:1077158
 [1]
  1. Georgetown University, Washington DC 20057

The main results of the computational modeling was: 1. Development of a new genealogical algorithm to generate vacancy clusters in diamond starting from monovacancies combined with energy criteria based on TBDFT energetics. The method revealed that for smaller vacancy clusters the energetically optimal shapes are compact but for larger sizes they tend to show graphitized regions. In fact smaller clusters of the size as small as 12 already show signatures of this graphitization. The modeling gives firm basis for the slit-pore modeling of porous carbon materials and explains some of their properties. 2. We discovered small vacancy clusters and their physical characteristics that can be used to spectroscopically identify them. 3. We found low barrier pathways for vacancy migration in diamond-like materials by obtaining for the first time optimized reaction pathways.

Research Organization:
Georgetown University, Washington DC 20057
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-07ER46472
OSTI ID:
1077158
Report Number(s):
DOE-FG02-07ER46472-1; RX2220-831
Country of Publication:
United States
Language:
English

Similar Records

Nucleation of Small Silicon Carbide Dust Clusters in AGB Stars
Journal Article · Wed May 10 00:00:00 EDT 2017 · Astrophysical Journal · OSTI ID:1077158

Finding Possible Transition States of Defects in Silicon Carbide and α-Iron using the Dimer Method
Journal Article · Wed Apr 02 00:00:00 EST 2003 · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 202:1-7 · OSTI ID:1077158

Experimental and Computational Studies of Ion-Solid Interactions in Silicon Carbide
Conference · Mon Apr 05 00:00:00 EDT 2004 · OSTI ID:1077158