Electrical biasing and voltage contrast imaging in a focused ion beam system
- Sandia National Labs., Albuquerque, NM (United States)
- Micrion Corp., Peabody, MA (United States)
We present two new techniques that enhance conventional focused ion beam (FIB) system capabilities for integrated circuit (IC) analysis: in situ electrical biasing and voltage contrast imaging. We have used in situ electrical biasing to enable a number of advanced failure analysis applications including (1) real time evaluation of device electrical behavior during milling and deposition, (2) verification of IC functional modifications without removal from the FIB system, and (3) ultraprecision control for cross sectioning of deep submicron structures, such as programmed amorphous silicon antifuses. We have also developed FIB system voltage contrast imaging that can be used for a variety of failure analysis applications. The use of passive voltage contrast imaging for defect localization and for navigation on planarized devices will be illustrated. In addition, we describe new, biased voltage contrast imaging techniques and provide examples of their application to the failure analysis of complex ICs. We discuss the necessary changes in system operating parameters to perform biased voltage contrast imaging.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 106667
- Report Number(s):
- SAND-95-1937C; CONF-951156-3; ON: DE95017566
- Resource Relation:
- Conference: ISTFA `95: 21. international symposium for testing and failure analysis, Santa Clara, CA (United States), 5-10 Nov 1995; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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