Contact method to allow benign failure in ceramic capacitor having self-clearing feature
A capacitor exhibiting a benign failure mode has a first electrode layer, a first ceramic dielectric layer deposited on a surface of the first electrode, and a second electrode layer disposed on the ceramic dielectric layer, wherein selected areas of the ceramic dielectric layer have additional dielectric material of sufficient thickness to exhibit a higher dielectric breakdown voltage than the remaining majority of the dielectric layer. The added thickness of the dielectric layer in selected areas allows lead connections to be made at the selected areas of greater dielectric thickness while substantially eliminating a risk of dielectric breakdown and failure at the lead connections, whereby the benign failure mode is preserved.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- Assignee:
- Delphi Technologies, Inc. (Troy, MI)
- Patent Number(s):
- 8,208,239
- OSTI ID:
- 1054078
- Country of Publication:
- United States
- Language:
- English
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