Ammothermal Growth of Gan Substrates For Leds: High-Pressure Ammonothermal Process for Bulk Gallium Nitride Crystal Growth for Energy Efficient Commercially Competitive Lighting
Broad Funding Opportunity Announcement Project: The new GaN crystal growth method is adapted from that used to grow quartz crystals, which are very inexpensive and represent the second-largest market for single crystals for electronic applications (after silicon). More extreme conditions are required to grow GaN crystals and therefore a new type of chemical growth chamber was invented that is suitable for large-scale manufacturing. A new process was developed that grows GaN crystals at a rate that is more than double that of current processes. The new technology will enable GaN substrates with best-in-world quality at lowest-in-world prices, which in turn will enable new generations of white LEDs, lasers for full-color displays, and high-performance power electronics.
- Research Organization:
- Soraa, Inc.
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI ID:
- 1047162
- Country of Publication:
- United States
- Language:
- English
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