Synthesis of Non-blinking Semiconductor Quantum Dots Emitting in the Near-Infrared
- Los Alamos National Laboratory
Our previous work demonstrates that Quasi-Type II CdSe/CdS core-shell quantum dots with thick shells (3-5 nm) exhibit unique photophysical characteristics, including improved chemical robustness over typical thin-shelled core/shell systems and the elimination of blinking through suppression of nonradiative Auger recombination. Here we describe a new thick-shelled heterostructure, InP/CdS, which exhibits a Type II bandgap alignment producing near-infrared (NIR) emission. Samples with a range of shell thicknesses were synthesized, enabling shell-thickness-dependent study of the absorbance and emission spectra, fluorescence lifetimes, and quantum yields. InP/CdS/ZnS core/shell/shell structures were also synthesized to reduce cadmium exposure for applications in the biological environment. Single particle spectroscopy indicates reduced blinking and improved photostability with increasing shell thickness, resulting in thick-shelled dots that are appropriate for single-particle tracking measurements with NIR emission.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Laboratory Directed Research and Development (LDRD) Program
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1044829
- Report Number(s):
- LA-UR-12-22429; TRN: US201214%%513
- Resource Relation:
- Conference: American Chemical Society ; 2012-03-25 - 2012-03-25 ; San Diego, California, United States
- Country of Publication:
- United States
- Language:
- English
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