High-rate, Low-cost Process for High-Efficiency Flexible c-Si PV
- Ampulse Corp.
The film c-Si based photovoltaics on RABiTS substrates would be capable of achieving efficiency above 15%, but at costs comparable to thin films. Utilizing a uniquely-textured and flexible metal substrate developed at the superconducting materials program at ORNL, coupled to an NREL breakthrough in hotwire chemical vapor deposition (HWCVD) processes, silicon heteroepitaxy is for the first time being directly-deposited out of silane gas, into a silicon structure that is less than 5 microns thick, crystallographically-oriented, and large-grained – ideal for solar PV power generation. We have recently overcome the problem of Ni and Cu diffusion into Si forming NiSi/CuSi towers through buffer development. Due to the lattice mismatch between the oxide cap layer and Si, recombination-active threading dislocation defects form in the silicon layer. We can lattice match the buffer with silicon by alloying with germanium, which can subsequently be graded out for the actual device layer. The main goal of this project is to develop a physical vapor deposition process for the growth Silicon, Germanium, or Silicon-Germanium alloy films.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Office of Technology Development (EE-20)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1038037
- Report Number(s):
- NFE-11-03408
- Country of Publication:
- United States
- Language:
- English
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