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Title: Examination of Na-Doped Mo Sputtering for CIGS Devices: Cooperative Research and Development Final Report, CRADA Number CRD-10-375

Abstract

This work has investigated the use of Na doped Mo (MONA) sputtering targets for use in preparing CIGS devices. The Mo:Na material is doped to about 3% Na by weight, implying that a 40 nm layer on top of the standard Mo contact contains sufficient Na to dope a 2.5 ..mu..m CIGS film. The ability to control Na doping independent of both CIGS processing conditions and adhesion is an important gainfor industry and research. Manufacturers gain a route to increased manufacturability and performance, while NREL researchers gain a tightened performance distribution of devices and increased process flexibility. Our immediate partner in this work, the Climax Molybdenum Technology Center, gains validation of their product.

Authors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1033030
Report Number(s):
NREL/TP-7A10-53586
TRN: US201202%%618
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ADHESION; DISTRIBUTION; FLEXIBILITY; MANUFACTURERS; MOLYBDENUM; PERFORMANCE; PROCESSING; SPUTTERING; TARGETS; VALIDATION; CRADA; Na diffusion; CIGS layer

Citation Formats

Repins, Ingrid. Examination of Na-Doped Mo Sputtering for CIGS Devices: Cooperative Research and Development Final Report, CRADA Number CRD-10-375. United States: N. p., 2012. Web. doi:10.2172/1033030.
Repins, Ingrid. Examination of Na-Doped Mo Sputtering for CIGS Devices: Cooperative Research and Development Final Report, CRADA Number CRD-10-375. United States. https://doi.org/10.2172/1033030
Repins, Ingrid. 2012. "Examination of Na-Doped Mo Sputtering for CIGS Devices: Cooperative Research and Development Final Report, CRADA Number CRD-10-375". United States. https://doi.org/10.2172/1033030. https://www.osti.gov/servlets/purl/1033030.
@article{osti_1033030,
title = {Examination of Na-Doped Mo Sputtering for CIGS Devices: Cooperative Research and Development Final Report, CRADA Number CRD-10-375},
author = {Repins, Ingrid},
abstractNote = {This work has investigated the use of Na doped Mo (MONA) sputtering targets for use in preparing CIGS devices. The Mo:Na material is doped to about 3% Na by weight, implying that a 40 nm layer on top of the standard Mo contact contains sufficient Na to dope a 2.5 ..mu..m CIGS film. The ability to control Na doping independent of both CIGS processing conditions and adhesion is an important gainfor industry and research. Manufacturers gain a route to increased manufacturability and performance, while NREL researchers gain a tightened performance distribution of devices and increased process flexibility. Our immediate partner in this work, the Climax Molybdenum Technology Center, gains validation of their product.},
doi = {10.2172/1033030},
url = {https://www.osti.gov/biblio/1033030}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2012},
month = {Sun Jan 01 00:00:00 EST 2012}
}