Lateral conduction infrared photodetector
- Albuquerque, NM
A photodetector for detecting infrared light in a wavelength range of 3-25 .mu.m is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 8,022,390
- Application Number:
- 11/840,278
- OSTI ID:
- 1027204
- Country of Publication:
- United States
- Language:
- English
InAs/(GaIn)Sb short-period superlattices for focal plane arrays
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conference | May 2005 |
Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications
|
journal | May 1987 |
Type-II InAs/GaInSb superlattices for infrared detection: an overview
|
conference | May 2005 |
Competitive technologies of third generation infrared photon detectors
|
journal | January 2006 |
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