Electric Field Penetration in Au/Nb:SrTiO3 Schottky Junctions Probed by Bias-Dependent Internal Photoemission

Journal Article · Mon Aug 15 00:00:00 EDT 2011 · Submitted to Applied Physics Letters 98, 192103 (2011)

DOI:https://doi.org/10.1063/1.3589375· OSTI ID:1022536

Hikita, Y

Electric field penetration into the metallic side of a Schottky junction is in principle a universal phenomenon, the magnitude of which increases with the semiconductor permittivity. Here, we quantitatively probe this effect using bias-dependent internal photoemission spectroscopy at the Schottky junction between a large dielectric permittivity semiconductor SrTiO{sub 3} and gold. A clear linear reduction of the barrier height with increasing interface electric field was observed, highlighting the importance of field penetration into the gold. The interfacial permittivity of SrTiO{sub 3} at the interface is reduced from the bulk value, reflecting intrinsic suppression at the interface.

• Research Organization: SLAC National Accelerator Lab., Menlo Park, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 1022536
• Report Number(s): SLAC-PUB-14522; TRN: US201118%%236
• Journal Information: Submitted to Applied Physics Letters 98, 192103 (2011), Journal Name: Submitted to Applied Physics Letters 98, 192103 (2011)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
ELECTRIC FIELDS
GOLD
PERMITTIVITY
PHOTOEMISSION
PROBES
SPECTROSCOPY
MATSCI