Weak-link capacitor

Patent · Tue Jun 07 00:00:00 EDT 2011

OSTI ID:1021892

Dirk, Shawn M ^[1]; Johnson, Ross S ^[1]; Wheeler, David R ^[1]; Bogart, Gregory R ^[2]

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1. Albuquerque, NM
2. Corrales, NM

A process for making a dielectric material where a precursor polymer selected from poly(phenylene vinylene) polyacetylene, poly(p-phenylene), poly(thienylene vinylene), poly(1,4-naphthylene vinylene), and poly(p-pyridine vinylene) is energized said by exposure by radiation or increase in temperature to a level sufficient to eliminate said leaving groups contained within the precursor polymer, thereby transforming the dielectric material into a conductive polymer. The leaving group in the precursor polymer can be a chloride, a bromide, an iodide, a fluoride, an ester, an xanthate, a nitrile, an amine, a nitro group, a carbonate, a dithiocarbamate, a sulfonium group, an oxonium group, an iodonium group, a pyridinium group, an ammonium group, a borate group, a borane group, a sulphinyl group, or a sulfonyl group.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Aubuquerque, NM)
• Patent Number(s): 7,955,945
• Application Number: 12/892,055
• OSTI ID: 1021892
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE