Electron cyclotron resonance deposition of amorphous silicon alloy films and devices. Final subcontract report, 1 April 1991--31 March 1992
- Jet Propulsion Lab., Pasadena, CA (United States)
This report describes work to develop a state-of-the-art electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) system. The objective was to understand the deposition processes of amorphous silicon (a-Si:H) and related alloys, with a best-effort improvement of optoelectronic material properties and best-effort stabilization of solar cell performance. ECR growth parameters were systematically and extensively investigated; materials characterization included constant photocurrent measurement (CPM), junction capacitance, drive-level capacitance profiling (DLCP), optical transmission, light and dark photoconductivity, and small-angle X-ray scattering (SAXS). Conventional ECR-deposited a-Si:H was compared to a new form, a-Si:(Xe, H), in which xenon gas was added to the ECR plasma. a-Si:(Xe,H) possessed low, stable dark conductivities and high photosensitivites. Light-soaking revealed photodegradation rates about 35% lower than those of comparable radio frequency (rf)-deposited material. ECR-deposited p-type a SiC:H and intrinsic a-Si:H films underwent evaluation as components of p-i-n solar cells with standard rf films for the remaining layers.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States); California Institute of Technology (CalTech), Pasadena, CA (United States). Jet Propulsion Lab. (JPL)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 10186157
- Report Number(s):
- NREL/TP-411-5123; ON: DE93000023
- Resource Relation:
- Other Information: PBD: Oct 1992
- Country of Publication:
- United States
- Language:
- English
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