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Title: Non-H2Se, Ultra-Thin CuInSe2 Devices: Annual Subcontract Report, 10 November 1992 - 9 November 1993

Abstract

This report describes advances made during Phase II (November 10, 1992-November 9, 1993) of a three-phase, cost-shared subcontract whose ultimate goal is the demonstration of thin film CuInSe{sub 2} photovoltaic modules prepared by methods adaptable to safe, high yield, high volume manufacturing. At the end of Phase I, EPV became one of the first groups to clear the 10% efficiency barrier for CIS cells prepared by non-H{sub 2}Se selenization. During Phase II a total area efficiency of 12.5% was achieved for a 1 cm{sup 2} cell. The key achievement of Phase II was the production of square foot CIS modules without the use of H{sub 2}Se. This is seen as a crucial step towards the commercialization of CIS. Using a novel interconnect technology, EPV delivered an 8.0% aperture area efficiency mini-module and a 6.2% aperture area efficiency 720 cm{sub 2} module to NREL. On the processing side, advances were made in precursor formation and the selenization profile, both of which contributed to higher quality CIS. The higher band gap quaternary chalcopyrite material CuIn(S{sub x}, Se{sub 1{minus}X}){sub 2} was prepared and 8% cells were fabricated using this material. Device analysis revealed a correlation between long wavelength quantum efficiency and the CISmore » Cu/In ratio. Temperature dependent studies highlighted the need for high V{sub OC} devices to minimize the impact of the voltage drop at operating temperature. Numerical modeling of module performance was performed in order to identify the correct ZnO sheet resistance for modules. Efforts in Phase III will focus on increase of module efficiency to 9-10%, initiation of an outdoor testing program, preparation of completely uniform CIS plates using second generation selenization equipment, and exploration of alternative precursors for CIS formation.« less

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
10182615
Report Number(s):
NREL/TP-413-7165
ON: DE94011894; TRN: 94:008170
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: Sep 1994
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; COPPER SELENIDE SOLAR CELLS; DESIGN; INDIUM SELENIDE SOLAR CELLS; PROGRESS REPORT; THIN FILMS; PHOTOVOLTAIC CELLS; QUANTUM EFFICIENCY; PERFORATION; photovoltaics; solar cells; devices; copper indium diselenide; selenium; 140501; PHOTOVOLTAIC CONVERSION

Citation Formats

Delahoy, A. E., Britt, J., Faras, F., and Kiss, Z. Non-H2Se, Ultra-Thin CuInSe2 Devices: Annual Subcontract Report, 10 November 1992 - 9 November 1993. United States: N. p., 1994. Web. doi:10.2172/10182615.
Delahoy, A. E., Britt, J., Faras, F., & Kiss, Z. Non-H2Se, Ultra-Thin CuInSe2 Devices: Annual Subcontract Report, 10 November 1992 - 9 November 1993. United States. https://doi.org/10.2172/10182615
Delahoy, A. E., Britt, J., Faras, F., and Kiss, Z. 1994. "Non-H2Se, Ultra-Thin CuInSe2 Devices: Annual Subcontract Report, 10 November 1992 - 9 November 1993". United States. https://doi.org/10.2172/10182615. https://www.osti.gov/servlets/purl/10182615.
@article{osti_10182615,
title = {Non-H2Se, Ultra-Thin CuInSe2 Devices: Annual Subcontract Report, 10 November 1992 - 9 November 1993},
author = {Delahoy, A. E. and Britt, J. and Faras, F. and Kiss, Z.},
abstractNote = {This report describes advances made during Phase II (November 10, 1992-November 9, 1993) of a three-phase, cost-shared subcontract whose ultimate goal is the demonstration of thin film CuInSe{sub 2} photovoltaic modules prepared by methods adaptable to safe, high yield, high volume manufacturing. At the end of Phase I, EPV became one of the first groups to clear the 10% efficiency barrier for CIS cells prepared by non-H{sub 2}Se selenization. During Phase II a total area efficiency of 12.5% was achieved for a 1 cm{sup 2} cell. The key achievement of Phase II was the production of square foot CIS modules without the use of H{sub 2}Se. This is seen as a crucial step towards the commercialization of CIS. Using a novel interconnect technology, EPV delivered an 8.0% aperture area efficiency mini-module and a 6.2% aperture area efficiency 720 cm{sub 2} module to NREL. On the processing side, advances were made in precursor formation and the selenization profile, both of which contributed to higher quality CIS. The higher band gap quaternary chalcopyrite material CuIn(S{sub x}, Se{sub 1{minus}X}){sub 2} was prepared and 8% cells were fabricated using this material. Device analysis revealed a correlation between long wavelength quantum efficiency and the CIS Cu/In ratio. Temperature dependent studies highlighted the need for high V{sub OC} devices to minimize the impact of the voltage drop at operating temperature. Numerical modeling of module performance was performed in order to identify the correct ZnO sheet resistance for modules. Efforts in Phase III will focus on increase of module efficiency to 9-10%, initiation of an outdoor testing program, preparation of completely uniform CIS plates using second generation selenization equipment, and exploration of alternative precursors for CIS formation.},
doi = {10.2172/10182615},
url = {https://www.osti.gov/biblio/10182615}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Sep 01 00:00:00 EDT 1994},
month = {Thu Sep 01 00:00:00 EDT 1994}
}