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Title: Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers

Abstract

A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al{sub 0.32}Ga{sub 0.68}As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al{sub 0.32}Ga{sub 0.68}:Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700{degrees}C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450{degrees}C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500{degrees}C. The nature of the defect was shown to be different for material grown at 350 and 230{degrees}C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230{degrees}C, respectively.

Authors:
;  [1]; ;  [2];  [3]
  1. Michigan Technological Univ., Houghton, MI (United States). Dept. of Physics
  2. Brookhaven National Lab., Upton, NY (United States)
  3. Geo-Centers, Inc., Eatontown, NJ (United States). Fort Monmouth Operation
Publication Date:
Research Org.:
Brookhaven National Lab., Upton, NY (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10171054
Report Number(s):
BNL-60605; CONF-9405198-3
ON: DE94015823; TRN: 94:015467
DOE Contract Number:  
AC02-76CH00016
Resource Type:
Conference
Resource Relation:
Conference: 6. international workshop on slow-positron beam techniques for solids and surfaces (SLOPOS6),Makuhari (Japan),18-22 May 1994; Other Information: PBD: [1994]
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; DEFECTS; GALLIUM ARSENIDES; ANNIHILATION; TEMPERATURE DEPENDENCE; ION IMPLANTATION; CRYSTAL DOPING; DOPED MATERIALS; ANNEALING; POSITRON BEAMS; SILICON; 665300; 360601; INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER; PREPARATION AND MANUFACTURE

Citation Formats

Umlor, M T, Keeble, D J, Asoka-Kumar, P, Lynn, K G, and Cooke, P W. Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers. United States: N. p., 1994. Web.
Umlor, M T, Keeble, D J, Asoka-Kumar, P, Lynn, K G, & Cooke, P W. Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers. United States.
Umlor, M T, Keeble, D J, Asoka-Kumar, P, Lynn, K G, and Cooke, P W. 1994. "Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers". United States. https://www.osti.gov/servlets/purl/10171054.
@article{osti_10171054,
title = {Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers},
author = {Umlor, M T and Keeble, D J and Asoka-Kumar, P and Lynn, K G and Cooke, P W},
abstractNote = {A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al{sub 0.32}Ga{sub 0.68}As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al{sub 0.32}Ga{sub 0.68}:Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700{degrees}C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450{degrees}C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500{degrees}C. The nature of the defect was shown to be different for material grown at 350 and 230{degrees}C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230{degrees}C, respectively.},
doi = {},
url = {https://www.osti.gov/biblio/10171054}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Aug 01 00:00:00 EDT 1994},
month = {Mon Aug 01 00:00:00 EDT 1994}
}

Conference:
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