Microstructures of InAs{sub 1{minus}x}Sb{sub x} (x = 0.07--0.14) alloys and strained-layer superlattices
Growth of InAs{sub l{minus}x},Sb{sub x} alloys by MOCVD at 475C results in CuPt ordering even at Sb concentrations as low as x = 0.07--0.14. The two {l_brace}111{r_brace}{sub B} variants are present, but each exists separately in 1--2 {mu}m regions. However, the ordering is incomplete: it occurs in platelet domains lying on {l_brace}111{r_brace} habit planes within a disordered matrix, and is not continuous at the atomic scale within the domains. This ordering apparently explains the reduction in infrared emission energies relative to the bandgaps of bulk alloys. Similar ordering is found in an InAs{sub 0.91}Sb{sub 0.09}/In{sub 0.87}Ga{sub 0.13}AS strained-layer superlattice with lower-than, expected emission energy. High-resolution images indicate that the SLS has planar, sharply defined interfaces. Infrared LEDs have been made from such superlattices.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10170396
- Report Number(s):
- SAND-94-0506C; CONF-940616-1; ON: DE94015801; BR: GB0103012
- Resource Relation:
- Conference: Electronic materials conference,Boulder, CO (United States),22-24 Jun 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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