Ion mixing of thin ZrO{sub 2} films on sapphire

Conference · Tue Jun 01 00:00:00 EDT 1993

OSTI ID:10169120

Evans, N D ^[1]; Joslin, D L; McHargue, C J ^[2]

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1. Oak Ridge Inst. for Science and Education, TN (United States)
2. Tennessee Univ., Knoxville, TN (United States). Dept. of Materials Science and Engineering

Ion beam induced mixing, a process useful in various applications such as adhesion enhancement, involving, metal films on either metal or either metal or oxide substrates has been studied for several years. For this study, analytical electron microscopy (AEM) has been used to investigate ion mixing in an oxide-oxide system: ZrO{sub 2} thin film on {alpha}-Al{sub 2}O{sub 3}.

• Research Organization: Oak Ridge National Lab., TN (United States); Oak Ridge Inst. for Science and Education, TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400; AC05-76OR00033
• OSTI ID: 10169120
• Report Number(s): CONF-930783-2; ON: DE93015214
• Resource Relation: Conference: 27. Microbeam Analysis Society meeting,Los Angeles, CA (United States),11-16 Jul 1993; Other Information: PBD: [1993]
• Country of Publication: United States
• Language: English

Related Subjects

07 ISOTOPES AND RADIATION SOURCES
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ZIRCONIUM OXIDES
MIXING
ALUMINIUM OXIDES
ION BEAMS
ELECTRON MICROSCOPY
CHROMIUM IONS
INTERFACES
KRYPTON IONS
KEV RANGE 100-1000
ION IMPLANTATION
070205
360201
665300
INDUSTRIAL APPLICATIONS
RADIATION PROCESSING
PREPARATION AND FABRICATION
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER