Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching
A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission bean, of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Dept. of Energy
- Patent Number(s):
- PATENTS-US-A7883315
- Application Number:
- ON: DE94014899; PAN: 7-883,315
- OSTI ID:
- 10165557
- Resource Relation:
- Other Information: PBD: 1992
- Country of Publication:
- United States
- Language:
- English
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