The growth of InAs{sub 1-x}Sb{sub x}/InAs strained-layer superlattices by metal-organic chemical vapor deposition
InAs{sub 1-x}Sb{sub x}/InAs strained-layer superlattice (SLS) semiconductors and thick epitaxial layers of InAs{sub 1-x}Sb{sub x} were grown under a variety of conditions by metal-organic chemical vapor deposition on InAs substrates. The III/V ratio was varied from 0.026 to 1.0 over a temperature range of 475--525C, at pressures of 200 to 660 torr and growth rates of 0.75 to 3.0 {mu}m/hour. The composition of the ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. These layers were characterized by optical microscopy, SIMS, and x-ray diffraction. The optical properties of these SLS`s were determined by infrared photoluminescence and absorption measurements. The PL peak energies of the alloys` and the SLS`s are consistently lower than the previously reported values for the bandgap of InAs{sub 1-x}Sb{sub x} alloys.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10162028
- Report Number(s):
- SAND-93-0300C; CONF-930851-1; ON: DE93015028
- Resource Relation:
- Conference: 9. American conference on crystal growth: crystal growth, characterization and applications,Baltimore, MD (United States),1-6 Aug 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
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